NEW CM400DY-24NF IGBT NEW CM400DY24NF MITSUBISHI

NEW CM400DY-24NF IGBT NEW CM400DY24NF MITSUBISHI

1、CM400DY-24NF Electrical parameters

1 Maximum collector current：400 A

2 Collector-emitter maximum voltage：1200 V

3 Gate-emitter maximum voltage：20 V

4 Maximum power dissipation：1470 W

5 Maximum operating temperature：150°C

2、CM400DY-24NF Performance advantage

1 Low loss technology：

· Using CSTBTTM silicon wafer technology, the LPT structure is used for 1200V modules to reduce losses.

2 Thermal performance：

· Built-in aluminum nitride (AlN) insulating base layer, small thermal resistance, excellent ΔT (j-f) performance, suitable for high-power applications.

3 Temperature cycling capacity：

· By optimizing the solder thickness, the temperature cycle and high power cycle capabilities are improved.

3、CM400DY-24NF Product picture